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IGW75N60T trenchstop ? series q ifag ipc td vls 1 rev. 2.6 20.09.2013 low loss igbt: igbt in trenchstop ? and fieldstop technology features: ? very low v ce(sat) 1.5v (typ.) ? maximum junction temperature 175c ? short circuit withstand time 5 ? s ? designed for : - frequency converters - uninterrupted power supply ? trenchstop ? and fieldstop technology for 600v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed ? positive temperature coefficient in v ce(sat) ? low emi ? low gate charge ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking package IGW75N60T 600v 75a 1.5v 175 ? c g75t60 pg-to247-3 maximum ratings parameter symbol value unit collector-emitter voltage, t j 2 5 ? c v c e 600 v dc collector current, limited by t jmax t c = 25 ? c t c = 100 ? c i c 150 75 a pulsed collector current, t p limited by t jmax i c p u l s 225 turn off safe operating area v ce = 600v, t j = 175 ? c, t p = 1s - 225 gate-emitter voltage v g e ? 20 v short circuit withstand time 2) v ge = 15v, v cc ? 400v, t j ? 150 ? c t s c 5 ? s power dissipation t c = 25 ? c p t o t 428 w operating junction temperature t j -40...+175 ? c storage temperature t s t g -55...+150 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1 j-std-020 and jesd-022 2) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to247-3
IGW75N60T trenchstop ? series q ifag ipc td vls 2 rev. 2.6 20.09.2013 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r t h j c 0.35 k/w thermal resistance, junction ? ambient r t h j a 40 electrical characteristic, at t j = 25 ? c, unless otherwise specified parameter symbol conditions value unit min. typ. max. static characteristic collector-emitter breakdown voltage v ( b r ) c e s v g e = 0v , i c = 0 .2m a 600 - - v collector-emitter saturation voltage v c e ( s a t ) v g e = 15 v , i c = 75 a t j =2 5 ? c t j =1 7 5 ? c - - 1.5 1.9 2.0 - gate-emitter threshold voltage v g e ( t h ) i c = 1. 2m a, v c e = v g e 4.1 4.9 5.7 zero gate voltage collector current i c e s v c e = 60 0 v , v g e = 0v t j =2 5 ? c t j =1 7 5 ? c - - - - 40 5000 a gate-emitter leakage current i g e s v c e = 0v , v g e =2 0 v - - 100 na transconductance g f s v c e = 20 v , i c = 75 a - 41 - s integrated gate resistor r g i n t - dynamic characteristic input capacitance c i s s v c e = 25 v , v g e = 0v , f = 1 mh z - 4620 - pf output capacitance c o s s - 288 - reverse transfer capacitance c r s s - 137 - gate charge q g a t e v c c = 48 0 v, i c =7 5 a v g e = 15 v - 470 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh short circuit collector current 1) i c ( s c ) v g e = 15 v , t s c ? 5 ? s v c c = 4 0 0 v, t j ? 150 ? c - 687.5 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
IGW75N60T trenchstop ? series q ifag ipc td vls 3 rev. 2.6 20.09.2013 switching characteristic, inductive load, at t j =25 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn-on delay time t d ( o n ) t j = 2 5 ? c , v c c = 4 0 0 v , i c = 7 5 a , v g e = 0 / 1 5 v , r g = 5 ? , l ? = 1 0 0 n h , c ? = 3 9 p f l ? , c ? f r o m f i g . e energy losses include ?tail? and diode reverse recovery. diode from ikw75n60t - 33 - ns rise time t r - 36 - turn-off delay time t d ( o f f ) - 330 - fall time t f - 35 - turn-on energy 1) e o n - 2.0 - mj turn-off energy e o f f - 2.5 - total switching energy e t s - 4.5 - switching characteristic, inductive load, at t j =175 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn-on delay time t d ( o n ) t j = 1 7 5 ? c , v c c = 4 0 0 v , i c = 7 5 a , v g e = 0 / 1 5 v , r g = 5 ? , l ? = 1 0 0 n h , c ? = 3 9 p f l ? , c ? f r o m f i g . e energy losses include ?tail? and diode reverse recovery. diode from ikw75n60t - 32 - ns rise time t r - 37 - turn-off delay time t d ( o f f ) - 363 - fall time t f - 38 - turn-on energy 1) e o n - 2.9 - mj turn-off energy e o f f - 2.9 - total switching energy e t s - 5.8 -
IGW75N60T trenchstop ? series q ifag ipc td vls 4 rev. 2.6 20.09.2013 i c , c o l l e c t o r c u r r e n t 10h z 100h z 1khz 10khz 100khz 0a 50a 100a 150a 200a t c =110c t c =80c i c , c o l l e c t o r c u r r e n t 1v 10v 100v 1000v 1a 10a 100a 10s 50s 1ms dc t p =1s 10ms f , switching frequency v ce , collector - emitter voltage figure 1 . collector current as a function of switching frequency ( t j ? 175 ? c, d = 0.5, v ce = 400v, v ge = 0/15v, r g = 5 ? ) figure 2 . safe operating area ( d = 0, t c = 25 ? c, t j ? 175 ? c; v ge =0/15v) p t o t , p o w e r d i s s i p a t i o n 25c 50c 75c 100c 125c 150c 0w 50w 100w 150w 200w 250w 300w 350w 400w i c , c o l l e c t o r c u r r e n t 25c 75c 125c 0a 30a 60a 90a 120a t c , case temperature t c , case temperature figure 3 . power dissipation as a function of case temperature ( t j ? 175 ? c) figure 4 . dc collector current as a function of case temperature ( v ge ? 15v, t j ? 175 ? c) i c i c
IGW75N60T trenchstop ? series q ifag ipc td vls 5 rev. 2.6 20.09.2013 i c , c o l l e c t o r c u r r e n t 0v 1v 2v 3v 0a 30a 60a 90a 120a 15v 7v 9v 11v 13v v ge =20v i c , c o l l e c t o r c u r r e n t 0v 1v 2v 3v 0a 30a 60a 90a 120a 15v 7v 9v 11v 13v v g e =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5 . typical output characteristic ( t j = 25c) figure 6 . typical output characteristic ( t j = 175c) i c , c o l l e c t o r c u r r e n t 0 v 2 v 4 v 6 v 8 v 0 a 2 0 a 4 0 a 6 0 a 8 0 a 2 5 c t j = 1 7 5 c v c e ( s a t ) , c o l l e c t o r - e m i t t s a t u r a t i o n v o l t a g e 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v i c =75a i c =150a i c =37.5a v ge , gate-emitter voltage t j , junction temperature figure 7 . typical transfer characteristic (v ce =20v) figure 8 . typical collector - emitter saturation voltage as a function of junction temperature ( v ge = 15v)
IGW75N60T trenchstop ? series q ifag ipc td vls 6 rev. 2.6 20.09.2013 t , s w i t c h i n g t i m e s 0a 40a 80a 120a 10ns 100ns t r t d(on) t f t d(off) t , s w i t c h i n g t i m e s ? ? ? ? ? ? ? ? 10 ns 100 ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9 . typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 5 ? , dynamic test circuit in figure e) figure 10 . typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 75a, dynamic test circuit in figure e) t , s w i t c h i n g t i m e s 25c 50c 75c 100c 125c 15 0c 100ns t r t d(on) t f t d(off) v g e ( t h ) , g a t e - e m i t t t r s h o l d v o l t a g e -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v m in. typ. m ax. t j , junction temperature t j , junction temperature figure 11 . typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 75a, r g = 5 ? , dynamic test circuit in figure e) figure 12 . gate - emitter threshold voltage as a function of junction temperature ( i c = 1.2ma)
IGW75N60T trenchstop ? series q ifag ipc td vls 7 rev. 2.6 20.09.2013 e , s w i t c h i n g e n e r g y l o s s e s 0a 20a 40a 60a 80a 100a 120a 140a 0.0mj 4.0mj 8.0mj 12.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , s w i t c h i n g e n e r g y l o s s e s ? ? ? ? ? ? ? ? ? ? 0 .0m j 2 .0m j 4 .0m j 6 .0m j 8 .0m j e ts * e off *) e on a nd e ts in clu d e lo ss e s d u e to d io d e rec o v e ry e on * i c , collector current r g , gate resistor figure 13 . typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 5 ? , dynamic test circuit in figure e) figure 14 . typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 75a, dynamic test circuit in figure e) e , s w i t c h i n g e n e r g y l o s s e s 25c 50c 75c 100c 125c 150c 0.0mj 1.0mj 2.0mj 3.0mj 4.0mj 5.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , s w i t c h i n g e n e r g y l o s s e s 300v 350v 400v 450v 500v 550v 0m j 2m j 4m j 6m j 8m j e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15 . typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 75a, r g = 5 ? , dynamic test circuit in figure e) figure 16 . typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 75a, r g = 5 ? , dynamic test circuit in figure e)
IGW75N60T trenchstop ? series q ifag ipc td vls 8 rev. 2.6 20.09.2013 v g e , g a t e - e m i t t e r v o l t a g e 0nc 100nc 200nc 300nc 400nc 0v 5v 10v 15v 480v 120v c , c a p a c i t a n c e 0v 10v 20v 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17 . typical gate charge ( i c =75 a) figure 18 . typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) i c ( s c ) , s h o r t c i r c u i t c o l l e c t o r c u r r e n t 12v 14v 16v 18v 0a 250a 500a 750a 1000a t s c , s h o r t c i r c u i t w i t h s t a n d t i m e 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19 . typical short circuit collector current as a function of gate- emitter voltage ( v ce ? 400v, t j ? 150 ? c) figure 20 . short circuit withstand time as a function of gate-emitter voltage ( v ce =400v , start at t j = 25c, t jmax <150c)
IGW75N60T trenchstop ? series q ifag ipc td vls 9 rev. 2.6 20.09.2013 z t h j c , t r a n s i e n t t h e r m a l i m p e d a n c e 1s 10s 100s 1ms 10ms 100ms 10 -3 k/w 10 -2 k/w 10 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width figure 21 . igbt transient thermal impedance ( d = t p / t ) r , ( k / w ) ? , ( s ) ? ? 0.1968 0.115504 0.0733 0.009340 0.0509 0.000823 0.0290 0.000119 c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2
IGW75N60T trenchstop ? series q ifag ipc td vls 10 rev. 2.6 20.09.2013
IGW75N60T trenchstop ? series q ifag ipc td vls 11 rev. 2.6 20.09.2013 i r r m 90% i r r m 10% i r r m di /dt f t r r i f i,v t q s q f t s t f v r di /dt r r q =q q r r s f + t =t t r r s f + figure c. definition of diodes switching characteristics p(t) 1 2 n t ( t ) j ? 1 1 ? 2 2 n n ? t c r r r r rr figure d. thermal equivalent circuit figure a. definition of switching times figure b. definition of switching losses
IGW75N60T trenchstop ? series q ifag ipc td vls 12 rev. 2.6 20.09.2013 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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